BEGIN:VCALENDAR
VERSION:2.0
PRODID:icalendar-ruby
CALSCALE:GREGORIAN
X-WR-CALNAME:MSE Seminar: Hiroshi Amano (Nagoya)
X-WR-TIMEZONE:Eastern Time (US & Canada)
BEGIN:VEVENT
DTSTAMP:20260609T204409Z
UID:tag:localist.com\,2008:EventInstance_48720130988684
DTSTART:20250501T200000Z
DTEND:20250501T210000Z
DESCRIPTION:Acceleration of Social Implementation of Wide Bandgap and Ultra
 wide Bandgap Semiconductors\n\nI would like to emphasize the need for the 
 research and development of wide- bandgap (WBG) and ultrawide-bandgap (UWB
 G) semiconductors\, especially GaN\, AlN\, and their alloys. The contribut
 ion of GaN and related materials in LED lighting to energy savings is sign
 ificant. The application of these material systems is not limited to light
 ing: replacing Si-based power devices with GaN-based power devices can red
 uce the total electricity consumption by 25%. GaN-based high-voltage power
  devices should become the key devices in establishing renewable-energy-ba
 sed electricity grids because of their high-efficiency\, high-speed switch
 ing\, and high-voltage capability. GaN-based high- frequency and high-powe
 r transistors will provide a unique solution for realizing millimeter-wave
  communication systems.\n\nFor the early social implementation of these de
 vices\, it is necessary to establish mass production technology. Si-based 
 logic\, memory\, and power device manufacturing are now mature\, and mass 
 production is already widespread. One of the key issues for the early comm
 ercialization of WBG and UWBG semiconductor devices is compatibility with 
 Si-device processes. An in-plane junction can be achieved by ion implantat
 ion\, which is commonly used in Si device fabrication because the damage c
 aused by ion implantation can be repaired by annealing. In the case of nit
 rides\, which are compound semiconductors\, there are many types of damage
  such as anion and cation vacancies as well as interstitials and their com
 plexes. Therefore\, the simple annealing technique used in Si device proce
 sses can hardly repair damaged WBG and UWBG devices. The formation of low-
 resistance ohmic contacts\, especially p-layers\, is one of the key issues
  for the dynamic stable operation of high-power and high-frequency devices
 . In the ASPIRE program\, Cornell University and Nagoya University are try
 ing to understand the formation mechanism of Mg in GaN intercalated struct
 ures and its application to low- resistance ohmic contacts to the p-layers
 . It is also very important to form an interface between the large-bandgap
  dielectric and the p-GaN inversion MOS structure with low carrier traps\,
  high stability\, and positive threshold voltage to realize high-efficienc
 y high- power devices. In the case of Si\, a good and stable MOS structure
  is easily formed by Si surfaces oxidation. Conversely\, if dense carrier 
 traps form between the oxide and p-GaN layers\, a good interface of MOS st
 ructures cannot be achieved.\n\nIn this presentation\, the challenges of f
 abricating GaN\, AlN\, and AlGaN-based devices in a process compatible wit
 h Si devices and the underlying physics in these devices are discussed.\n 
 \n\nBio: Professor Hiroshi Amano received Doctor of Engineering from Nagoy
 a University. Currently he is a Director\, Center for Integrated Research 
 of Future Electronics\, and a Professor\, Institute of Materials and Syste
 ms for Sustainability\, Nagoya University.\n\nHe shared the 2014 Nobel Pri
 ze in Physics with Prof. Isamu Akasaki and Prof. Shuji Nakamura "for the i
 nvention of efficient blue light-emitting diodes which has enabled bright 
 and energy-saving white light sources".\n\nHe is currently developing tech
 nologies for the fabrication of high-efficiency power semiconductor develo
 pment and new energy-saving devices at Nagoya University.
GEO:42.443844;-76.483292
LOCATION:Kimball Hall\, B11
SUMMARY:MSE Seminar: Hiroshi Amano (Nagoya)
URL;VALUE=URI:https://events.cornell.edu/event/mse-seminar-hiroshi-amano-na
 goya
CATEGORIES:Seminar
END:VEVENT
END:VCALENDAR