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Tuesday, September 10, 2019 at 9:00am to 12:00pm
This class is designed to introduce the student to fundamental concepts and operating principles for the deposition of thin films by atomic layer deposition (ALD). It includes a discussion of the motivation behind ALD and some insights into the operational aspects of this thin film deposition technique as they impact thin film properties. Issues such as gas flows, chemical reactions, deposition rate, thermal window and the impact of enhanced plasma processing are discussed. Special consideration for balance-of-plant issues are also reviewed.
The student should achieve a general understanding of thin film deposition by ALD and be familiarized with available resources for further training. This course also includes several short quizzes to better enable the learning process. Students who attend the class can receive a personalized certificate of attendance signed by the course instructor.
Lesker U events on Atomic Layer Deposition have been held in the US, Asia & Europe.
Specific topics include:
a. Motivation for Atomic Layer Deposition (ALD)
b. The ALD Process in ideal conditions
c. Review of basic vacuum and flow regimes critical to ALD
i. Laminar Flow
ii. Viscous or turbulent flow
d. Evolution of ALD reactor designs
e. ALD in non-ideal conditions
i. The impact of Chaos
ii. Steric hindrance
iii. Thin film growth models
f. Recent Advanced in Process Design
i. Addition of Plasmas
ii. Enhanced Reactivity of Precursors and Carrier Gases
iii. Alternative Pulse Regimes
g. Impact of the ALD Process on Balance-of-Plant (ie. pumping systems)
h. Recent Examples of Device Solutions achieved using ALD