Cornell Electron Devices Society (EDS) presents:

Rongming Chu
Pennsylvania State University

Recent Developments of GaN Super-Heterojunction

Abstract
30 years ago, GaN was a material with lots of defects and little hope to become useful. Today, GaN is the most important semiconductor after Si. GaN light-emitting diodes (LEDs) have revolutionized lighting and display. GaN high-electron-mobility-transistors (HEMTs) are enabling 4G and 5G base stations, as well as being adopted to make fast chargers. With the tremendous technology and commercial success, a question arises: are we near the end of GaN research? In this talk, I will share with you my group’s view on the performance limits of GaN, as well as our recent efforts attempting to approach the performance limits with the super-heterojunction technology.

Bio
Rongming Chu is an Associate Professor at the Electrical Engineering Department of the Pennsylvania State University. He did his Ph.D. study on GaN microwave transistors at UC-Santa Barbara. After finishing his Ph.D. in 2008, he spent two years at Transphorm Inc., developing the company’s 1st GaN power switch product prototype. From 2010 to 2018, he was a Senior Research Staff leading GaN power device development at HRL Laboratories, a corporate research organization jointly owned by Boeing and General Motors.

Sponsored by
School of ECE, Cornell University
Partially funded by GPSAFC